DocumentCode :
707863
Title :
AlGaN photodiodes for UVC, UVB and UVA spectral ranges
Author :
Lamkin, I.A. ; Andreev, M.Y. ; Tarasov, S.A. ; Solomonov, A.V. ; Kurin, S.Yu.
Author_Institution :
Dept. of Micro- & Nanoelectron., St. Petersburg Electrotech. Univ. LETI, St. Petersburg, Russia
fYear :
2015
fDate :
2-4 Feb. 2015
Firstpage :
30
Lastpage :
32
Abstract :
A technology of ultraviolet photodiodes based on Me-AlGaN Schottky barrier separating in UVA, UVB and UVC spectral ranges was proposed. The effect of altering the AlGaN soild solution composition on the long-wavelength edge of photosensitivity of fabricated photodetector was studied. Influence of Schottky barrier metal on the value of structures photosensitivity was examined.
Keywords :
Schottky barriers; Schottky diodes; aluminium compounds; gallium compounds; photodetectors; photodiodes; AlGaN; AlGaN photodiodes; AlGaN soild solution composition; Me-AlGaN Schottky barrier; Schottky barrier metal; UVA spectral range; UVB spectral range; UVC spectral range; photodetector; photosensitivity; ultraviolet photodiodes; Annealing; Artificial intelligence; Gold; AlGaN; Schottky barriers; photodetector; photodiodes; ultraviolet;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Young Researchers in Electrical and Electronic Engineering Conference (EIConRusNW), 2015 IEEE NW Russia
Conference_Location :
St. Petersburg
Print_ISBN :
978-1-4799-7305-7
Type :
conf
DOI :
10.1109/EIConRusNW.2015.7102225
Filename :
7102225
Link To Document :
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