DocumentCode :
707928
Title :
A low-power interface circuit for multi-sensor applications
Author :
Po-Chang Wu ; Bin-Da Liu ; Chih-Yuan Yeh ; Sih-Yu Chen ; Hann-Huei Tsai ; Ying-Zong Juang
Author_Institution :
Dept. of Electron. Eng., Nat. Cheng Kung Univ., Tainan, Taiwan
fYear :
2015
fDate :
23-26 March 2015
Firstpage :
1
Lastpage :
4
Abstract :
This paper presents a low-power generic readout circuit for capacitive and resistive complementary metaloxide- semiconductor (CMOS) micro-electro-mechanical-system (MEMS) sensors. This readout architecture can be scaled to even more sensors to achieve chip area and power consumption efficient. An incremental sigma-delta analog-to-digital converter (ΣΔ ADC) is used for providing multiplexed digital output. A demonstration chip was implemented in a 0.18-μm CMOS MEMS process, which integrates a three-axis accelerometer, the readout circuit, and an ARM M0 microprocessor. The chip area is 3.5×2.5 mm2 and the interface circuit with ADC draw only 120 mA of current from a 1.8-V supply. A magneto-resistance-type three-axis magnetic sensor is manufactured via extra post processes. This chip is designed to demonstrate a monolithic virtual gyroscope, which is a popular solution for low-power and low-cost inertial applications.
Keywords :
CMOS integrated circuits; accelerometers; capacitance measurement; capacitive sensors; electric resistance measurement; gyroscopes; integrated circuit design; low-power electronics; magnetic sensors; microprocessor chips; microsensors; readout electronics; sensor fusion; sigma-delta modulation; ΣΔ ADC; ARM M0 microprocessor; CMOS MEMS sensor; capacitive complementary metal-oxide-semiconductor; current 120 mA; incremental sigma-delta analog-to-digital converter; low-power generic readout circuit; low-power interface circuit; magnetoresistance-type three-axis magnetic sensor; microelectromechanical-system sensor; monolithic virtual gyroscope; multiplexed digital output; multisensor application; power consumption; resistive complementary metal-oxide-semiconductor; size 0.18 mum; three-axis accelerometer; voltage 1.8 V; Accelerometers; CMOS integrated circuits; Capacitance; Magnetic sensors; Micromechanical devices; Noise;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Inertial Sensors and Systems (ISISS), 2015 IEEE International Symposium on
Conference_Location :
Hapuna Beach, HI
Type :
conf
DOI :
10.1109/ISISS.2015.7102367
Filename :
7102367
Link To Document :
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