• DocumentCode
    707933
  • Title

    The concept of "collapsed electrodes" for glassblown spherical resonators demonstrating 200:1 aspect ratio gap definition

  • Author

    Giner, Joan ; Shkel, Andrei M.

  • Author_Institution
    Microsyst. Lab., Univ. of California, Irvine, Irvine, CA, USA
  • fYear
    2015
  • fDate
    23-26 March 2015
  • Firstpage
    1
  • Lastpage
    4
  • Abstract
    We report a technique for defining high aspect ratio electrostatic gaps in micromachined glassblown spherical resonators. The approach is based on intentionally allowing a physical contact between the resonator and electrode structure, hence “collapsed electrodes”, then releasing and metalizing the electrodes and resonator. We utilized 500 um SOI electrodes in the glassblowing fabrication process, allowing to define narrow (2 um) and thick (400 um) electrostatic actuators (200:1 aspect ratio). We demonstrated a spherical resonator integrated with electrodes, blurring the boundary in complexity of fabricating conventional (2D) and glassblown (3D) resonators. The test resonator demonstrated 866kHz, 1.46MHz and 1.59MHz for N=1, N=2, and N=3 modes and the corresponding Q-factors of 1500, 1300 and 1600, all in vacuum of 0.4mT.
  • Keywords
    electrostatic actuators; micromachining; micromechanical resonators; silicon-on-insulator; 200:1 aspect ratio gap; Q-factors; SOI electrode; aspect ratio electrostatic gap; collapsed electrode; electrode structure; electrostatic actuator; frequency 1.46 MHz; frequency 1.59 MHz; frequency 866 kHz; glassblowing fabrication process; micromachined glassblown spherical resonator; physical contact; size 500 mum; Electrodes; Electrostatics; Fabrication; Micromechanical devices; Optical resonators; Resonant frequency; Silicon; 3D MEMS; Glassblowing; Spherical Resonator;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Inertial Sensors and Systems (ISISS), 2015 IEEE International Symposium on
  • Conference_Location
    Hapuna Beach, HI
  • Type

    conf

  • DOI
    10.1109/ISISS.2015.7102382
  • Filename
    7102382