Single event effects in an analog SOI transconductor: a case study

The present work studies the response to an Analog Single Event Transient (ASET) of a Silicon-on-insulator (SOI) OTA. By adopting an ASET model previously reported and fully compatible with SPICE descriptions, a simulation campaign is carried out in the SOI OTA taken as case study. SOI technology happens to be well suited for radiation-hardened applications and is rapidly becoming a main-stream commercial technology. However, one of the main reasons for the rapid degradation of commercial ICs in space is the natural radiation environment present there. The faults caused by the passing of a high energy particle through the circuit are called Single Event Effects (SEEs). This study identifies the most sensitive transistors that should be hardened in order to improve the behavior in the system-level.