Impact of increasing the fin height on soft error rate and static noise margin in a FinFET-based SRAM cell

In this work we investigate the impact of the in height of FinFET transistors on the Soft Error Rate and Static Noise Margin of a FinFET-based SRAM cell. 3-D TCAD environment is used for the analysis. Results show that increases the fin height of FinFET transistors degrades the radiation robustness of the SRAM cell. However, increases the fin height of FinFET transistors improves the Static Noise Margin of the SRAM cell. This suggests that the optimum fin height value of FinFET transistor depends on the SRAM application.