100-V 2-MHz isolated QSW-ZVS three-level DC-DC converter with on-chip dynamic dead-time controlled synchronous gate driver for eGaN power FETs

This paper presents techniques for high-voltage converters to achieve high power efficiency at high switching frequency. A quasi-square-wave zero-voltage switching isolated three-level half-bridge architecture is proposed to minimize the converter switching loss under high-voltage high-frequency conditions. A synchronous three-level gate driver with dynamic dead-time control is also developed to ensure reliability of all eGaN power FETs, automatically generate appropriate dead-time for all power FETs to achieve ZVS with minimal reverse bias behavior, and provide fast propagation delays for high-frequency converter operation. Implemented in a 0.5-μm HV CMOS process, the proposed gate driver achieves 15ns propagation delays and enables a 100V 35W isolated three-level half-bridge converter to achieve the peak power efficiencies of 95.2% and 90.7% at 1MHz and 2MHz, respectively.