Evaluation of 1.2 kV, 100A SiC modules for high-frequency, high-temperature applications

Cumulative advances in substrate quality and device manufacturing yields over the past few years have paved the way for the commercial introduction of Silicon Carbide (SiC) power modules capable of supporting applications in the 10-20 kW load class and beyond. This paper investigates the suitability of one such module for high-frequency operation at elevated temperatures by leveraging a high-peak-current gate-drive circuit and careful management of parasitic-induced oscillations. Clamped-inductive load experiments have been carried out at elevated temperatures, and the results compared to published results for similar-scale prototype modules. This work demonstrates achievement of very fast slew rates and switching times; the resulting switching losses are 50-70% lower than figures reported in the literature for modules of this scale.