New high efficiency transfer mold module with parallel IGBT and Super Junction MOSFET

Author

Donlon, John F. ; Motto, Eric R. ; Kato, Masahiro ; Shiramizu, Masataka ; Tanaka, Tomofumi

Author_Institution

Powerex, Inc., Youngwood, PA, USA

fYear

2015

fDate

15-19 March 2015

Firstpage

2464

Lastpage

2468

Abstract

Annual Performance Factor (APF) requirements which calculate the annual electricity consumption have been applied to applications such as air conditioners necessitating reduction in the power consumption of the semiconductor switches in the inverter. A new Super Mini DIPIPM™ with Super Junction MOSFETs in parallel with the IGBTs has been developed to meet these lower annual power consumption requirements. The on-voltage characteristic in the low current region is a key issue for APF because the power loss at light load condition represents a significant portion of the annual utilization of the inverter. The on-voltage at low current can be reduced by using SJ-MOSFETs in parallel with the IGBT switches. A reduction in power consumption at light load of 32% has been achieved.

Keywords

MOSFET; air conditioning; field effect transistor switches; insulated gate bipolar transistors; invertors; power consumption; power semiconductor switches; APF requirement; SJ-MOSFET; air conditioner; annual performance factor requirement; electricity consumption; high efficiency transfer mold module; inverter; parallel IGBT switch; power consumption; power loss; semiconductor switch; super junction MOSFET; super mini DIPIPM; Heating; Insulated gate bipolar transistors; Inverters; Junctions; MOSFET; Performance evaluation; Power demand;

fLanguage

English

Publisher

ieee

Conference_Titel

Applied Power Electronics Conference and Exposition (APEC), 2015 IEEE

Conference_Location

Charlotte, NC

Type

conf

DOI

10.1109/APEC.2015.7104694

Filename

7104694