Title :
Embedded structure for a voltage clamping circuit
Author :
Weiyi Feng ; Lizhi Xu ; Weiqiang Zhang ; Hongyang Wu
Author_Institution :
Delta Power Electron. Center, Delta Electron. (Shanghai) Co., Ltd., Shanghai, China
Abstract :
In this paper, a novel embedded voltage clamping structure is proposed for an IGBT module. Firstly, the negative effect of loop inductances in the voltage clamping circuit is analyzed. And then, a novel embedded structure is proposed to minimize the parasitic inductances in the voltage clamping loop. Finally, an experiment is carried out on an IGBT module. With the proposed embedded structure, the IGBT voltage spike is maximally limited at the turn-off transient, which keeps the device operating in a much safer region.
Keywords :
inductance; insulated gate bipolar transistors; power supply quality; IGBT module; IGBT voltage spike; embedded voltage clamping structure; loop inductances; parasitic inductance; voltage clamping loop; Capacitors; Clamps; Inductance; Insulated gate bipolar transistors; Logic gates; Snubbers; Switches; Voltage clamping; embedded structure; parasitic inductances;
Conference_Titel :
Applied Power Electronics Conference and Exposition (APEC), 2015 IEEE
Conference_Location :
Charlotte, NC
DOI :
10.1109/APEC.2015.7104714
