Accurate Analytical Single-Photoelectron Response of Silicon Photomultipliers

This paper addresses a comprehensive analytical analysis of a new accurate electrical model of silicon photomultiplier (SiPM) detectors. The adopted circuit model allows to truly reproduce the SiPM output signal waveform apart from the specific technology employed for the fabrication process, and can also be profitably exploited to perform reliable circuit-level simulations. A novel analytical expression of the transient single-photoelectron response due to photon absorption is systematically developed. The attained function accurately reproduces the fast detector ignition, ensuing avalanche self-quenching, and final slow recharging operation. Predictive capabilities of the adopted analytical model are demonstrated by means of experimental measurements on a real detector.