Title :
The impact of deep trench and well proximity on MOSFET performance
Author :
Hanyu Sheng ; Bettinger, Tamara ; Bates, John
Author_Institution :
Freescale Semicond. Inc., Tempe, AZ, USA
Abstract :
The test structures are developed in order to enable quantification of the effects of deep trench and well proximity on MOSFETs in a 0.13 μm process. Two types of structures are analyzed: with the deep trench and the well edges varied together; and those edges are varied independently. The measurement results show that the deep trench and well proximity effects can influence device performance.
Keywords :
MOSFET; semiconductor device testing; MOSFET device performance; deep trench impact; size 0.13 mum; well proximity edges effects; Layout; MOSFET; Performance evaluation; Proximity effects; Threshold voltage; Voltage measurement;
Conference_Titel :
Microelectronic Test Structures (ICMTS), 2015 International Conference on
Conference_Location :
Tempe, AZ
Print_ISBN :
978-1-4799-8302-5
DOI :
10.1109/ICMTS.2015.7106113
