Title :
Compact modeling solution of layout dependent effect for FinFET technology
Author :
Chen, David C. ; Guan Shyan Lin ; Tien Hua Lee ; Lee, Ryan ; Liu, Y.C. ; Meng Fan Wang ; Yi Ching Cheng ; Wu, D.Y.
Author_Institution :
Adv. Technol. Dev. Div., United Microelectron. Corp. (UMC), Hsinchu, Taiwan
Abstract :
We successfully developed and verified a complete compact model solution for layout dependent effect (LDE) of FinFET technology. LDE has significant impact on the device performances mainly due to the application of stressors and aggressive device scaling. With LDE, performance degradation may be up to 10% or more. In this work, compact model solution for Length of Oxidation (LOD), Well Proximity Effect (WPE), Neighboring Diffusion Effect (NDE), Metal Boundary Effect (MBE), and Gate Line End Effect (GLE) were delivered. This solution was implemented successfully in BSIM-CMG for efficient circuit simulation.
Keywords :
MOSFET; diffusion; oxidation; proximity effect (lithography); semiconductor device models; semiconductor-metal boundaries; BSIM-CMG; FinFET technology; aggressive device scaling; compact modeling solution; gate line end effect; layout dependent effect; length of oxidation; metal boundary effect; neighboring diffusion effect; performance degradation; stressors; well proximity effect; FinFETs; Layout; Logic gates; MOSFET circuits; Mathematical model; Metals; Performance evaluation;
Conference_Titel :
Microelectronic Test Structures (ICMTS), 2015 International Conference on
Conference_Location :
Tempe, AZ
Print_ISBN :
978-1-4799-8302-5
DOI :
10.1109/ICMTS.2015.7106119
