Title :
A novel new gate charge measurement method
Author :
Mikata, Atsushi ; Kakitani, Hisao ; Takeda, Ryo ; Wadsworth, Alan
Author_Institution :
Keysight Technol., Hachioji, Japan
Abstract :
The drive for ever-increasing power circuit efficiencies ensures that the measurement of gate charge (Qg) will continue to grow in importance. In this paper, we explain a new Qg measurement method that solves many conventional Qg measurement issues. The outlined method supplies the same Qg curve obtained by traditional one-pass high-power measurement techniques using a new method that combines two Qg curves measured under lower power conditions.
Keywords :
charge measurement; power semiconductor devices; gate charge curve; gate charge measurement method; lower-power condition; power circuit efficiencies; traditional one-pass high-power measurement technique; Current measurement; Insulated gate bipolar transistors; Monitoring; Performance evaluation; Solids; Switches;
Conference_Titel :
Microelectronic Test Structures (ICMTS), 2015 International Conference on
Conference_Location :
Tempe, AZ
Print_ISBN :
978-1-4799-8302-5
DOI :
10.1109/ICMTS.2015.7106124
