DocumentCode
708657
Title
A novel new gate charge measurement method
Author
Mikata, Atsushi ; Kakitani, Hisao ; Takeda, Ryo ; Wadsworth, Alan
Author_Institution
Keysight Technol., Hachioji, Japan
fYear
2015
fDate
23-26 March 2015
Firstpage
138
Lastpage
140
Abstract
The drive for ever-increasing power circuit efficiencies ensures that the measurement of gate charge (Qg) will continue to grow in importance. In this paper, we explain a new Qg measurement method that solves many conventional Qg measurement issues. The outlined method supplies the same Qg curve obtained by traditional one-pass high-power measurement techniques using a new method that combines two Qg curves measured under lower power conditions.
Keywords
charge measurement; power semiconductor devices; gate charge curve; gate charge measurement method; lower-power condition; power circuit efficiencies; traditional one-pass high-power measurement technique; Current measurement; Insulated gate bipolar transistors; Monitoring; Performance evaluation; Solids; Switches;
fLanguage
English
Publisher
ieee
Conference_Titel
Microelectronic Test Structures (ICMTS), 2015 International Conference on
Conference_Location
Tempe, AZ
ISSN
1071-9032
Print_ISBN
978-1-4799-8302-5
Type
conf
DOI
10.1109/ICMTS.2015.7106124
Filename
7106124
Link To Document