A capacitive based piezoelectric AlN film quality test structure

Author

Jackson, Nathan ; Olszewski, Oskar Z. ; Keeney, Lynette ; Blake, Alan ; Mathewson, Alan

Author_Institution

Tyndall Nat. Inst., Univ. Coll. Cork, Cork, Ireland

fYear

2015

fDate

23-26 March 2015

Firstpage

193

Lastpage

197

Abstract

Aluminum nitride (AlN) is a piezoelectric material that is commonly used in various MEMS applications. However, determining the properties of the thin film typically requires multiple test structures, and there are various methods for obtaining the piezoelectric properties. This paper highlights the development of a capacitive based test structure that is capable of determining the different material properties. In addition this paper compares various test methods used to determine the piezoelectric properties of AlN.

Keywords

III-V semiconductors; aluminium compounds; capacitors; materials testing; piezoelectric semiconductors; piezoelectric thin films; wide band gap semiconductors; AlN; MEMS applications; capacitive based test structure; material properties; piezoelectric AlN film quality test structure; piezoelectric properties; thin film; Artificial intelligence; Capacitors; Micromechanical devices; Piezoelectric polarization; Rough surfaces; Surface roughness; Ultrasonic variables measurement; Aluminum nitride; Capacitor; MEMS; Piezoelectrics;

fLanguage

English

Publisher

ieee

Conference_Titel

Microelectronic Test Structures (ICMTS), 2015 International Conference on

Conference_Location

Tempe, AZ

ISSN

1071-9032

Print_ISBN

978-1-4799-8302-5

Type

conf

DOI

10.1109/ICMTS.2015.7106139

Filename

7106139