DocumentCode :
708664
Title :
A capacitive based piezoelectric AlN film quality test structure
Author :
Jackson, Nathan ; Olszewski, Oskar Z. ; Keeney, Lynette ; Blake, Alan ; Mathewson, Alan
Author_Institution :
Tyndall Nat. Inst., Univ. Coll. Cork, Cork, Ireland
fYear :
2015
fDate :
23-26 March 2015
Firstpage :
193
Lastpage :
197
Abstract :
Aluminum nitride (AlN) is a piezoelectric material that is commonly used in various MEMS applications. However, determining the properties of the thin film typically requires multiple test structures, and there are various methods for obtaining the piezoelectric properties. This paper highlights the development of a capacitive based test structure that is capable of determining the different material properties. In addition this paper compares various test methods used to determine the piezoelectric properties of AlN.
Keywords :
III-V semiconductors; aluminium compounds; capacitors; materials testing; piezoelectric semiconductors; piezoelectric thin films; wide band gap semiconductors; AlN; MEMS applications; capacitive based test structure; material properties; piezoelectric AlN film quality test structure; piezoelectric properties; thin film; Artificial intelligence; Capacitors; Micromechanical devices; Piezoelectric polarization; Rough surfaces; Surface roughness; Ultrasonic variables measurement; Aluminum nitride; Capacitor; MEMS; Piezoelectrics;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Microelectronic Test Structures (ICMTS), 2015 International Conference on
Conference_Location :
Tempe, AZ
ISSN :
1071-9032
Print_ISBN :
978-1-4799-8302-5
Type :
conf
DOI :
10.1109/ICMTS.2015.7106139
Filename :
7106139
Link To Document :
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