Integrated Schottky diode detector for THz spectrometer

The longitudinal beam shape properties, crucial information to operators, can be monitored in modern superconducting linear accelerators measuring the generated THz radiation. Recent semiconductor technology may help to replace the single element THz detectors (e.g. used at the ELBE accelerator in Helmholtz-Zentrum Dresden-Rossendorf (HZDR)) as well as the costly and bulky THz spectrometers. That´s why we develop a simple integrated on-chip spectrometer in a GaAs technology that shall be able to resolve 5 to 20 frequency points in the frequency range between 0.1 THz to 1.5 THz. The core element is an integrated Schottky diode used as a power sensor connected to on-chip antennas and filters. First results show that a multi-narrowband antenna approach is very promising regarding complexity, sensitivity and selectivity. This paper explains the design and presents the first simulation results for an on-chip Schottky diode detector operating at 300 GHz that will be used on the on-chip spectrometer.