Title :
Enhanced gain bandwidth and loss compensated cascaded single-stage CMOS distributed amplifier
Author :
Tarar, Mohsin ; Muh-Dey Wei ; Reckmann, Marc ; Negra, Renato
Author_Institution :
Dept. of High-Freq. Electron., RWTH Aachen Univ., Aachen, Germany
Abstract :
This work presents a loss compensated cascaded single-stage distributed amplifier (CSSDA) in commercial 65nm CMOS technology. The CSSDA is composed of three distributed stages connected in a cascade configuration to target high gain. The idle interstage drain terminations are omitted because of multiplicative gain mechanism. High gain is maintained over very large bandwidth through the inductive-peaking technique. Further, the CSSDA single cell is modified by a loss compensation technique to remove the high frequency losses of the artificial transmission lines which shows a significant enhancement in gain bandwidth (GBW) product. The simulation results show a GBW of 540GHz for the loss compensated CSSDA (LC-CSSDA) which is significantly higher than GBW of 350 GHz for a conventional CSSDA. The 2-stage (LC-CSSDA) shows a GBW of 835GHz which is almost twice the GBW (426 GHz) of a conventional 2-stage CSSDA.
Keywords :
CMOS integrated circuits; cascade networks; compensation; distributed amplifiers; GBW; LC-CSSDA; artificial transmission line; bandwidth 350 GHz; bandwidth 540 GHz; bandwidth 835 GHz; cascaded single-stage CMOS distributed amplifier; complementary metal oxide semiconductor; enhanced gain bandwidth; gain bandwidth; high frequency loss; idle interstage drain termination; inductive-peaking technique; loss compensation technique; multiplicative gain mechanism; size 65 nm; Bandwidth; Gain; Inductors; Logic gates; Power transmission lines; Propagation losses; Topology;
Conference_Titel :
Microwave Conference (GeMiC), 2015 German
Conference_Location :
Nuremberg
DOI :
10.1109/GEMIC.2015.7107822