The room temperature bonding method of Al2O3 barrier layers deposited using Atomic Layer Deposition

Room temperature bonding of Al₂O₃ layer deposited by Atomic Layer Deposition (ALD) was studied for fabrication of micro-electronics, and gas barrier structure of polymer films. ALD deposition was performed at different process temperature at 80, 150 and 250 °C. From results of AFM surface profile, samples prepared at higher temperature in ALD process have rough surface. Also polymer films processed at high temperature has large wrinkle. Bonded area using Si and polyimide substrate coated at 80 °C were large, and there is only small unbonded area.