Room temperature direct bonding and debonding of polyimide film on glass wafer using Si intermediate layer

In this study we succeeded in bonding and debonding polyimide films on glass wafers directly by using Si intermediate layer at room temperature for TFT fabrication. The Si layer was deposited on polyimide films and glass wafers by Ar ion beam sputtering, and then film and wafer ware brought into contact and pressed in high vacuum. The bonding strength can be controlled by the bonding condition such as Si layer thickness and Fe nano-adhesion layers. As a result, the polyimide film can be peeled off from glass wafer by reasonable force. Additionally, we made TFT on polyimide films after bonding and confirmed that the electric property of the TFT did not deteriorate after peeling.