Title :
Influence of air exposure time on bonding strength in Au-Au surface activated wafer bonding
Author :
Okumura, Ken ; Higurashi, Eiji ; Suga, Tadatomo ; Hagiwara, Kei
Author_Institution :
Univ. of Tokyo, Tokyo, Japan
Abstract :
In this paper, we investigated the influence of air exposure time after gold (Au) deposition on bonding strength in Au-Au bonding. Synthetic quartz glass wafers with smooth Au thin film (thickness: 30 nm, root mean square surface roughness: 0.43 nm) were successfully bonded in air at room temperature after argon radio frequency plasma activation process, even when they were exposed to air for a long term (800-2000 h) after Au deposition. High die-shear strength was obtained and the fractures typically occurred inside the bulk glass during die-shear test rather than at the bonded interface.
Keywords :
gold; quartz; surface treatment; wafer bonding; Au-Au; SiO2; air exposure time; argon radio frequency plasma activation process; bonding strength; gold deposition; size 30 nm; surface activated wafer bonding; synthetic quartz glass wafers; temperature 293 K to 298 K; time 800 h to 2000 h; Bonding; Gold; Plasma temperature; Rough surfaces; Surface roughness; Surface treatment; Au-Au Bonding; Surface Activated Bonding;
Conference_Titel :
Electronics Packaging and iMAPS All Asia Conference (ICEP-IACC), 2015 International Conference on
Conference_Location :
Kyoto
Print_ISBN :
978-4-9040-9012-1
DOI :
10.1109/ICEP-IAAC.2015.7111055
