DocumentCode
709622
Title
Process parameters for formic acid treatment with Pt catalyst for Cu direct bonding
Author
Matsuoka, Naoya ; Fujino, Masahisa ; Akaike, Masatake ; Suga, Tadatomo
Author_Institution
Univ. of Tokyo, Tokyo, Japan
fYear
2015
fDate
14-17 April 2015
Firstpage
460
Lastpage
463
Abstract
Direct bonding of Cu in atmospheric pressure is required in various device interconnections. A technique using formic acid treatment with Pt catalyst has been proposed and applied to Cu bonding at a low temperature below 200°C.
Keywords
bonding processes; catalysts; interconnections; platinum; semiconductor device metallisation; Cu; Pt; atmospheric pressure; catalyst; device interconnections; direct bonding; formic acid treatment; Bonding; Films; Oxidation; Platinum; Radiation effects; Surface treatment; Temperature; Cu-Cu direct bonding; bonding temperature; formic acid;
fLanguage
English
Publisher
ieee
Conference_Titel
Electronics Packaging and iMAPS All Asia Conference (ICEP-IACC), 2015 International Conference on
Conference_Location
Kyoto
Print_ISBN
978-4-9040-9012-1
Type
conf
DOI
10.1109/ICEP-IAAC.2015.7111058
Filename
7111058
Link To Document