Wafer bonding of SiC-SiC and SiC-Si by modified suface activated bonding method

SiC-SiC and SiC-Si wafer bonding has been achieved by two different modified surface activated bonding (SAB) methods without any chemical-clean treatment and high temperature annealing. Bonding strength of SiC-SiC is even higher than 32MPa. Bonding strength of SiC-Si bonded pair is also higher than the bulk strength of Si. The bonded wafers were almost completely bonded without some voids or peripheral area, which should be caused by some partilces and wafer warpage. The interfaces of bonded SiC-SiC and SiC-Si have been analyzed by high-resolution transmission electron microscopy (HRTEM) to verify the bonding mechanism.