Title :
Relationship between transient thermal impedance and shear strength of pressureless sintered silver as die attachment for power devices
Author :
Wang, M.Y. ; Mei, Y.H. ; Li, X. ; Lu, G.-Q.
Author_Institution :
Key Lab. of Adv. Joining Technol., Tianjin Univ., Tianjin, China
Abstract :
In our previous work, we had obtained “void-free” joints for large area die attachment by pressureless sintering of nanosilver paste at low temperatures. In this paper, we studied the relationship between transient thermal impedance and shear strength of the pressureless sintered nanosilver joints and found that the relationship could be described well by an exponential equation. According to this equation, the shear strength of the insulated gate bipolar transistor device could be estimated nondestructively by measuring its transient thermal impedance using the electrical method. The transient thermal impedance measurement is suggested as an alternative method to evaluate the quality of the die attachment for power devices.
Keywords :
electric impedance measurement; insulated gate bipolar transistors; microassembling; nanostructured materials; shear strength; silver alloys; sintering; Ag; electrical method; exponential equation; insulated gate bipolar transistor device; large area die attachment; nanosilver paste; power devices; pressureless sintered nanosilver joints; shear strength; transient thermal impedance measurement; void-free joints; Conductivity; Impedance; Impedance measurement; Insulated gate bipolar transistors; Joints; Thermal conductivity; Transient analysis; die attachment; nanosilver paste; pressureless low-temperature sintering; shear strength; transient thermal impedance;
Conference_Titel :
Electronics Packaging and iMAPS All Asia Conference (ICEP-IACC), 2015 International Conference on
Conference_Location :
Kyoto
Print_ISBN :
978-4-9040-9012-1
DOI :
10.1109/ICEP-IAAC.2015.7111077