Title :
Heat dissipation characterization and application of SiC power devices by transient thermal measurement
Author :
Endoh, Ryo ; Watanabe, Junichi ; Sugie, Ryuichi ; Yamamoto, Takashi
Author_Institution :
Toray Res. Center Inc., Otsu, Japan
Abstract :
In this study, we carry out the heat shock test to the SiC MOSFET, and the thermal resistance change before and after the test were measured by transient thermal measurement. It was confirmed that the thermal resistance of the solder layer has increased after the test. From the results of the cross-sectional SEM observation, we found that delamination occurs in the interface of the solder layer and the chip. It was identified as the cause of increased thermal resistance.
Keywords :
cooling; power MOSFET; scanning electron microscopy; silicon compounds; solders; thermal resistance; MOSFET; SiC; cross-sectional SEM observation; heat dissipation characterization; heat shock test; power devices; solder layer; thermal resistance; transient thermal measurement; Electric shock; Electrical resistance measurement; Heating; Semiconductor device measurement; Temperature measurement; Thermal resistance; MOSFET; Power device; SiC; Thermal capacitance; Thermal resistance;
Conference_Titel :
Electronics Packaging and iMAPS All Asia Conference (ICEP-IACC), 2015 International Conference on
Conference_Location :
Kyoto
Print_ISBN :
978-4-9040-9012-1
DOI :
10.1109/ICEP-IAAC.2015.7111125
