DocumentCode
709675
Title
Low temperature Au-Au surface-activated bonding using nitrogen atmospheric-pressure plasma treatment for optical microsystems
Author
Matsuoka, Seiya ; Yamamoto, Michitaka ; Higurashi, Eiji ; Suga, Tadatomo ; Sawada, Renshi
Author_Institution
Univ. of Tokyo, Tokyo, Japan
fYear
2015
fDate
14-17 April 2015
Firstpage
850
Lastpage
853
Abstract
This study investigated the effect of nitrogen (N2) atmospheric-pressure (AP) plasma treatment on the Au-Au bonding property. Surface analysis using x-ray photoelectron spectroscopy (XPS) before and after AP plasma treatment with different gases: N2 and Ar+O2 was performed. In the case of Ar+O2 AP plasma treatment, the oxidation of the Au surface (Au2O3) was detected by the chemical shift of the 4f levels in XPS spectra. In contrast, no oxidation of Au surfaces was observed after N2 AP plasma treatment. N2 AP plasma treatment was effective in improving the bondability between Au/Au compared with Ar+O2 AP plasma treatment (bonding temperature: 150°C).
Keywords
X-ray photoelectron spectra; bonding processes; chemical shift; gold alloys; oxidation; plasma materials processing; AP plasma treatment; Au2O3; X-ray photoelectron spectroscopy; XPS spectra; chemical shift; low temperature Au-Au surface-activated bonding; nitrogen atmospheric-pressure plasma treatment; optical microsystems; oxidation; surface analysis; temperature 150 C; Bonding; Gold; Optical surface waves; Plasma temperature; Surface contamination; Surface treatment; Atmosheric-pressure plasma; Au-Au bonding; Surface-activated bonding; X-ray photoelectron spectroscopy;
fLanguage
English
Publisher
ieee
Conference_Titel
Electronics Packaging and iMAPS All Asia Conference (ICEP-IACC), 2015 International Conference on
Conference_Location
Kyoto
Print_ISBN
978-4-9040-9012-1
Type
conf
DOI
10.1109/ICEP-IAAC.2015.7111132
Filename
7111132
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