• DocumentCode
    709793
  • Title

    Keynote Address 1: “Transistors and reliability in the innovation era”

  • Author

    Mistry, Kaizad

  • fYear
    2015
  • fDate
    19-23 April 2015
  • Firstpage
    1
  • Lastpage
    1
  • Abstract
    Summary form only given. Traditional transistor scaling drive the semiconductor industry through the 1990s, but led to the era of innovation driven transistor scaling. Strained silicon, high-k plus metal gate transistors, and fin based transistors were some of the key innovations in the last several process technology generations. This presentation will explore both the transistor scaling benefits from these innovations as well as the reliability implications covering the 90nm to 14nm timeframe.
  • Keywords
    elemental semiconductors; semiconductor device reliability; semiconductor industry; silicon; transistors; Si; fin based transistor; high-k plus metal gate transistor; reliability; semiconductor industry; size 90 nm to 14 nm; strained silicon; transistor scaling;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Reliability Physics Symposium (IRPS), 2015 IEEE International
  • Conference_Location
    Monterey, CA
  • Type

    conf

  • DOI
    10.1109/IRPS.2015.7112656
  • Filename
    7112656