DocumentCode
709793
Title
Keynote Address 1: “Transistors and reliability in the innovation era”
Author
Mistry, Kaizad
fYear
2015
fDate
19-23 April 2015
Firstpage
1
Lastpage
1
Abstract
Summary form only given. Traditional transistor scaling drive the semiconductor industry through the 1990s, but led to the era of innovation driven transistor scaling. Strained silicon, high-k plus metal gate transistors, and fin based transistors were some of the key innovations in the last several process technology generations. This presentation will explore both the transistor scaling benefits from these innovations as well as the reliability implications covering the 90nm to 14nm timeframe.
Keywords
elemental semiconductors; semiconductor device reliability; semiconductor industry; silicon; transistors; Si; fin based transistor; high-k plus metal gate transistor; reliability; semiconductor industry; size 90 nm to 14 nm; strained silicon; transistor scaling;
fLanguage
English
Publisher
ieee
Conference_Titel
Reliability Physics Symposium (IRPS), 2015 IEEE International
Conference_Location
Monterey, CA
Type
conf
DOI
10.1109/IRPS.2015.7112656
Filename
7112656
Link To Document