Title :
Keynote Address 1: “Transistors and reliability in the innovation era”
Abstract :
Summary form only given. Traditional transistor scaling drive the semiconductor industry through the 1990s, but led to the era of innovation driven transistor scaling. Strained silicon, high-k plus metal gate transistors, and fin based transistors were some of the key innovations in the last several process technology generations. This presentation will explore both the transistor scaling benefits from these innovations as well as the reliability implications covering the 90nm to 14nm timeframe.
Keywords :
elemental semiconductors; semiconductor device reliability; semiconductor industry; silicon; transistors; Si; fin based transistor; high-k plus metal gate transistor; reliability; semiconductor industry; size 90 nm to 14 nm; strained silicon; transistor scaling;
Conference_Titel :
Reliability Physics Symposium (IRPS), 2015 IEEE International
Conference_Location :
Monterey, CA
DOI :
10.1109/IRPS.2015.7112656
