Trapping characteristics and parametric shifts in lateral GaN HEMTs with SiO2/AlGaN gate stacks

Author

King, M.P. ; Dickerson, J.R. ; Dasgupta, S. ; Marinella, M.J. ; Kaplar, R.J. ; Piedra, D. ; Sun, M. ; Palacios, T.

Author_Institution

Sandia Nat. Labs., Albuquerque, NM, USA

fYear

2015

fDate

19-23 April 2015

Abstract

Recovery transients following blocking-state voltage stress are analyzed for two types of AlGaN/GaN HEMTs, one set of devices with thick AlGaN barrier layers and another with recessed-gate geometry and ALD SiO₂ gate dielectric. Results show temperature-invariant emission processes are present in both devices. Recessed-gate devices with SiO₂ dielectrics are observed to exhibit simultaneous trapping and emission processes during post-stress recovery.

Keywords

III-V semiconductors; aluminium compounds; dielectric materials; gallium compounds; high electron mobility transistors; semiconductor device reliability; silicon compounds; wide band gap semiconductors; ALD gate dielectric; SiO₂-AlGaN; barrier layers; blocking-state voltage stress; lateral HEMT reliabiity; parametric shifts; post-stress recovery; recessed-gate devices; recessed-gate geometry; recovery transients; temperature-invariant emission process; trapping characteristics; Aluminum gallium nitride; Gallium nitride; HEMTs; Logic gates; MODFETs; Stress; Transient analysis; HEMT; current collapse; defects; gallium nitride; power electronics; reliability; trapped charge;

fLanguage

English

Publisher

ieee

Conference_Titel

Reliability Physics Symposium (IRPS), 2015 IEEE International

Conference_Location

Monterey, CA

Type

conf

DOI

10.1109/IRPS.2015.7112689

Filename

7112689