Title :
TDDB improvement of copper/dielectric in the highly-integrated BEOL structure for 28nm technology node and beyond
Author :
Cheng-Pu Chiu ; Yen-Chun Liu ; Bin-Siang Tsai ; Yi-Jing Wang ; Yeh-Sheng Lin ; Yun-Ru Chen ; Chien-Lin Weng ; Sheng-Yuan Hsueh ; Hung, Jack ; Ho-Yu Lai ; Jei-Ming Chen ; Cheng, Albert H.-B ; Chien-Chung Huang
Author_Institution :
Adv. Technol. Dev. Div., United Microelectron. Corp., Tainan, Taiwan
Abstract :
Here we demonstrate the copper/dielectric TDDB improvement of 8 metal layers in 28nm technology node with 90 nm pitch. After the process optimization, the Weibull slope of MOM TDDB increase from 0.85 to 1.28 that improves the estimated MOM TDDB about 200 times.
Keywords :
copper; dielectric materials; electromigration; MOM TDDB estimation; Weibull slope; copper-dielectric TDDB improvement; highly-integrated BEOL structure; metal layers; process optimization; size 28 nm; Copper; Dielectrics; Integrated circuit reliability; Method of moments; Process control; BEOL; TDDB; process optimization; reliability;
Conference_Titel :
Reliability Physics Symposium (IRPS), 2015 IEEE International
Conference_Location :
Monterey, CA
DOI :
10.1109/IRPS.2015.7112701
