• DocumentCode
    709836
  • Title

    On the volatility of oxide defects: Activation, deactivation, and transformation

  • Author

    Grasser, T. ; Waltl, M. ; Goes, W. ; Wimmer, Y. ; El-Sayed, A.-M. ; Shluger, A.L. ; Kaczer, B.

  • Author_Institution
    Inst. for Microelectron., Tech. Univ. Wien, Vienna, Austria
  • fYear
    2015
  • fDate
    19-23 April 2015
  • Abstract
    Recent studies have clearly shown that oxide defects are more complicated than typically assumed in simple two-state models, which only consider a neutral and a charged state. In particular, oxide defects can be volatile, meaning that they can be deactivated and re-activated at the same site with the same properties. In addition, these defects can transform and change their properties. The details of all these processes are presently unknown and poorly characterized. Here we employ time-dependent defect spectroscopy (TDDS) to more closely study the changes occurring at the defect sites. Our findings suggest that these changes are ubiquitous and must be an essential aspect of our understanding of oxide defects. Using density-functional-theory (DFT) calculations, we propose hydrogen-defect interactions consistent with our observations. Our results suggest that standard defect characterization methods, such as the analysis of random telegraph noise (RTN), will typically only provide a snapshot of the defect landscape which is subject to change anytime during device operation.
  • Keywords
    MOSFET; density functional theory; random noise; semiconductor device models; semiconductor device noise; DFT calculations; RTN; TDDS; charged state; density-functional-theory; hydrogen-defect interactions; neutral state; oxide defect volatility; random telegraph noise analysis; standard defect characterization methods; time-dependent defect spectroscopy; two-state models; Discrete Fourier transforms; Hydrogen; Performance evaluation; Stress; Temperature dependence; Temperature measurement; Voltage measurement;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Reliability Physics Symposium (IRPS), 2015 IEEE International
  • Conference_Location
    Monterey, CA
  • Type

    conf

  • DOI
    10.1109/IRPS.2015.7112739
  • Filename
    7112739