Title :
28nm UTBB FDSOI product reliability/performance trade-off optimization through body bias operation
Author :
Mora, P. ; Federspiel, X. ; Cacho, F. ; Huard, V. ; Arfaoui, W.
Author_Institution :
Crolles 2 R&D Center, STMicroelectron., Crolles, France
Abstract :
This paper demonstrates the tremendous advantage of body biasing to set the best reliability/performance trade-off of electronic products. First, we review experiments performed on transistors, ring oscillators (RO) and CPU to quantify the impact of body biasing on reliability and performances. Then, the full picture including power, speed and reliability is discussed to highlight the way to get optimized circuits for different activities. Finally, we show that a unique dynamic management of performance and reliability can be achieved through body biasing operation.
Keywords :
circuit reliability; oscillators; silicon-on-insulator; transistors; CPU; RO; UTBB FDSOI product; body bias operation; dynamic management; electronic products; reliability-performance trade-off optimization; ring oscillators; size 28 nm; transistors; Aging; Human computer interaction; Integrated circuit reliability; Performance evaluation; Stress; Time-frequency analysis; NBTI; body bias; circuit; device; hot carrier; reliability;
Conference_Titel :
Reliability Physics Symposium (IRPS), 2015 IEEE International
Conference_Location :
Monterey, CA
DOI :
10.1109/IRPS.2015.7112761