• DocumentCode
    709847
  • Title

    From BTI variability to product failure rate: A technology scaling perspective

  • Author

    Huard, V. ; Angot, D. ; Cacho, F.

  • Author_Institution
    STMicroelectron., Crolles, France
  • fYear
    2015
  • fDate
    19-23 April 2015
  • Abstract
    This work provides elements to highlight the reliability challenges related to the technology scaling and the BTI variability. Through main milestones including device reliability scaling model (for both mean and spread), a discussion on the physical origin of BTI variability and a digital IP failure rate analytical model, the evolution of digital IP failure rates along the ITRS scaling roadmap is assessed. and an analysis of the ITRS roadmap on digital IP failure rates. This study offers new perspectives towards product hardening and qualification with respect to both fresh and BTI-related local variability, especially in context where Adaptive Voltage Scaling (AVS) is used to compensate for process centerings.
  • Keywords
    failure analysis; microprocessor chips; negative bias temperature instability; radiation hardening (electronics); AVS; BTI-related local variability; ITRS scaling roadmap; adaptive voltage scaling; device reliability scaling model; digital IP failure rate analytical model; microprocessor; product failure rate; product hardening; technology scaling; Aging; Correlation; Degradation; FinFETs; IP networks; Reliability; Standards; AVS; BTI; DVFS; ITRS; aged models; failure rate; gate-level models; guardband; microprocessor; multicore; product qualification; reliability; variability;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Reliability Physics Symposium (IRPS), 2015 IEEE International
  • Conference_Location
    Monterey, CA
  • Type

    conf

  • DOI
    10.1109/IRPS.2015.7112763
  • Filename
    7112763