Title :
From BTI variability to product failure rate: A technology scaling perspective
Author :
Huard, V. ; Angot, D. ; Cacho, F.
Author_Institution :
STMicroelectron., Crolles, France
Abstract :
This work provides elements to highlight the reliability challenges related to the technology scaling and the BTI variability. Through main milestones including device reliability scaling model (for both mean and spread), a discussion on the physical origin of BTI variability and a digital IP failure rate analytical model, the evolution of digital IP failure rates along the ITRS scaling roadmap is assessed. and an analysis of the ITRS roadmap on digital IP failure rates. This study offers new perspectives towards product hardening and qualification with respect to both fresh and BTI-related local variability, especially in context where Adaptive Voltage Scaling (AVS) is used to compensate for process centerings.
Keywords :
failure analysis; microprocessor chips; negative bias temperature instability; radiation hardening (electronics); AVS; BTI-related local variability; ITRS scaling roadmap; adaptive voltage scaling; device reliability scaling model; digital IP failure rate analytical model; microprocessor; product failure rate; product hardening; technology scaling; Aging; Correlation; Degradation; FinFETs; IP networks; Reliability; Standards; AVS; BTI; DVFS; ITRS; aged models; failure rate; gate-level models; guardband; microprocessor; multicore; product qualification; reliability; variability;
Conference_Titel :
Reliability Physics Symposium (IRPS), 2015 IEEE International
Conference_Location :
Monterey, CA
DOI :
10.1109/IRPS.2015.7112763