Title :
Thermal activation of PBTI-related stress and recovery processes in GaN MIS-HEMTs using on-wafer heaters
Author :
Lagger, P. ; Donsa, S. ; Spreitzer, P. ; Pobegen, G. ; Reiner, M. ; Naharashi, H. ; Mohamed, J. ; Mosslacher, H. ; Prechtl, G. ; Pogany, D. ; Ostermaier, C.
Author_Institution :
Infineon Technol. Austria AG, Villach, Austria
Abstract :
Threshold voltage instabilities are investigated in GaN-based metal-insulator-semiconductor (MIS) high-electron-mobility-transistors (HEMTs) with specially designed on-wafer heaters structures. The heaters are based on metal lines or 2-dimensional electron gas (2DEG) resistors and enable to choose the temperature during stress and recovery in the stress-recovery experiments independently. It allows to decouple thermal activation of capture (<; 0.9 eV) and emission (0.4-0.9 eV) processes at the dielectric/nitride interface, which is not possible in stress-recovery experiments performed at a common ambient temperature.
Keywords :
III-V semiconductors; MIS devices; gallium compounds; high electron mobility transistors; semiconductor device reliability; two-dimensional electron gas; wide band gap semiconductors; 2-dimensional electron gas resistors; 2DEG resistors; GaN; MIS-HEMT; PBTI-related stress-recovery process; common ambient temperature; dielectric-nitride interface; metal lines; metal-insulator-semiconductor high-electron-mobility-transistors; on-wafer heater structure; positive bias temperature instabilities; stress-recovery experiments; thermal activation; threshold voltage instability; HEMTs; Heating; MODFETs; Stress; Stress measurement; Temperature; Temperature measurement; GaN MIS HEMT; PBTI; interface states; oxide defects; threshold voltage drift;
Conference_Titel :
Reliability Physics Symposium (IRPS), 2015 IEEE International
Conference_Location :
Monterey, CA
DOI :
10.1109/IRPS.2015.7112767
