• DocumentCode
    709869
  • Title

    Robust ESD self-protected LDNMOSFET by an enhanced displacement-current triggering

  • Author

    Tzu-Cheng Kao ; Chen-Hsin Lien ; Chien-Wei Chiu ; Jian-Hsing Lee ; Yen-Hsiang Lo ; Chung-Yu Hung ; Tsung-Yi Huang ; Hung-Der Su

  • Author_Institution
    Inst. of Electron. Eng., Nat. Tsing Hua Univ., Hsinchu, Taiwan
  • fYear
    2015
  • fDate
    19-23 April 2015
  • Abstract
    A new enhanced displacement-current triggering by adding floating P+ diffusions at each source finger edge for the HV LDNMOSFET is proposed. Unlike the conventional substrate-triggered ESD protection technologies, it is very easy to implement the scheme by the layout without any special circuit and additional component. With a total width of 1600 μm, the HBM/ MM ESD performance improvements from 1.5 kV/ 150 V to 5.5 kV/ 450 V are achieved.
  • Keywords
    MOSFET; electrostatic discharge; HBM-MM ESD performance; HV LDNMOSFET; enhanced displacement-current triggering; floating P+ diffusions; high-voltage transistors; human body model; robust ESD self-protected LDNMOSFET; size 1600 mum; source finger edge; substrate-triggered ESD protection technology; voltage 5.5 kV to 150 V; Electrostatic discharges; Fingers; Layout; Logic gates; Robustness; Stress; Transistors; Electrostatic-discharge (ESD); Human Body Model (HBM); Machine Model (MM);
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Reliability Physics Symposium (IRPS), 2015 IEEE International
  • Conference_Location
    Monterey, CA
  • Type

    conf

  • DOI
    10.1109/IRPS.2015.7112796
  • Filename
    7112796
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=709869