Title :
Robust ESD self-protected LDNMOSFET by an enhanced displacement-current triggering
Author :
Tzu-Cheng Kao ; Chen-Hsin Lien ; Chien-Wei Chiu ; Jian-Hsing Lee ; Yen-Hsiang Lo ; Chung-Yu Hung ; Tsung-Yi Huang ; Hung-Der Su
Author_Institution :
Inst. of Electron. Eng., Nat. Tsing Hua Univ., Hsinchu, Taiwan
Abstract :
A new enhanced displacement-current triggering by adding floating P+ diffusions at each source finger edge for the HV LDNMOSFET is proposed. Unlike the conventional substrate-triggered ESD protection technologies, it is very easy to implement the scheme by the layout without any special circuit and additional component. With a total width of 1600 μm, the HBM/ MM ESD performance improvements from 1.5 kV/ 150 V to 5.5 kV/ 450 V are achieved.
Keywords :
MOSFET; electrostatic discharge; HBM-MM ESD performance; HV LDNMOSFET; enhanced displacement-current triggering; floating P+ diffusions; high-voltage transistors; human body model; robust ESD self-protected LDNMOSFET; size 1600 mum; source finger edge; substrate-triggered ESD protection technology; voltage 5.5 kV to 150 V; Electrostatic discharges; Fingers; Layout; Logic gates; Robustness; Stress; Transistors; Electrostatic-discharge (ESD); Human Body Model (HBM); Machine Model (MM);
Conference_Titel :
Reliability Physics Symposium (IRPS), 2015 IEEE International
Conference_Location :
Monterey, CA
DOI :
10.1109/IRPS.2015.7112796
