Title :
Investigation of single event upset and total ionizing dose in FeRAM for medical electronic tag
Author :
Uemura, Taiki ; Hashimoto, Masanori
Author_Institution :
Dept. of Inf. Syst. Eng., Osaka Univ., Suita, Japan
Abstract :
We investigate the single event upset (SEU) and total ionizing dose (TID) tolerance of FeRAMs fabricated in 180-nm technology against neutron and gamma-ray radiation. Our irradiation tests reveal that the FeRAM has an SEU rate of less than 8.5 × 10 3 FIT/Gbit for terrestrial neutrons and a tolerance up to the dose of 100-kGy for gamma-ray radiation. These results indicate that the FeRAM is suitable for the medical electronic tags which require sterilization with 25-kGy ionization radiation.
Keywords :
biomedical electronics; radiation hardening (electronics); random-access storage; FeRAM; SEU; TID tolerance; gamma-ray radiation; ionization radiation; irradiation tests; medical electronic tag; neutron radiation; single event upset; size 180 nm; terrestrial neutrons; total ionizing dose; Capacitors; Ferroelectric films; Gamma-rays; Neutrons; Nonvolatile memory; Radiation effects; Random access memory; Electronic tag; FeRAM; Gamma-ray; Medical; Single event upset; Sterilization; Total ionizing dose;
Conference_Titel :
Reliability Physics Symposium (IRPS), 2015 IEEE International
Conference_Location :
Monterey, CA
DOI :
10.1109/IRPS.2015.7112824
