Frequency and voltage effects on SER on a 65nm Sparc-V8 microprocessor under radiation test

Author

Bottoni, C. ; Coeffic, B. ; Daveau, J.M. ; Gasiot, G. ; Abouzeid, F. ; Clerc, S. ; Naviner, L. ; Roche, P.

Author_Institution

STMicroelectron., Crolles, France

fYear

2015

fDate

19-23 April 2015

Abstract

We present both heavy ion and alpha test results for SPARCV8 pipelined-microprocessors fabricated in a space CMOS 65nm platform. Two design implementations, standard and radiation-hardened, are compared at 50/300MHz and 0.8V/1.2V. The dominant failure modes are identified and the failure cross-section is compared with fault injection prediction.

Keywords

CMOS digital integrated circuits; failure analysis; integrated circuit design; integrated circuit reliability; integrated circuit testing; microprocessor chips; radiation hardening (electronics); SER; SPARCV8 pipelined-microprocessors; alpha test; failure cross-section; failure mode identification; fault injection prediction; frequency 300 MHz; frequency 50 MHz; frequency effect; heavy ion test; radiation test; radiation-hardened design implementation; size 65 nm; space CMOS platform; voltage 0.8 V; voltage 1.2 V; voltage effect; Clocks; Error correction codes; Ions; Microprocessors; Performance evaluation; Random access memory; Registers;

fLanguage

English

Publisher

ieee

Conference_Titel

Reliability Physics Symposium (IRPS), 2015 IEEE International

Conference_Location

Monterey, CA

Type

conf

DOI

10.1109/IRPS.2015.7112830

Filename

7112830