DocumentCode :
709900
Title :
MBU-Calc: A compact model for Multi-Bit Upset (MBU) SER estimation
Author :
Wei Wu ; Seifert, Norbert
Author_Institution :
Intel Labs., Hillsboro, OR, USA
fYear :
2015
fDate :
19-23 April 2015
Abstract :
Fast and accurate Soft Error Rate (SER) estimation is an important system design aspect. With the continued scaling of SRAM bit-cell dimensions and cell pitches, accurate modeling of the Multi-Bit Upset (MBU) component is becoming increasingly critical. This paper introduces MBU-Calc, a compact model for MBU SER estimation. The tool leverages Multi-Cell Upset (MCU) probabilities obtained through direct test-chip measurements. The main improvement with respect to prior published work [2] is the introduction of so-called Line Filling (LF) factors which enable more accurate projection and bucketing of silent data corruption (SDC) versus detected unrecoverable errors (DUE). The accuracy of the introduced model is demonstrated against measured MBU results.
Keywords :
estimation theory; probability; radiation hardening (electronics); DUE; LF factor; MBU-Calc; MCU probability; SDC; SER estimation; SRAM bit-cell dimension; cell pitch; detected unrecoverable error; line filling factor; multibit upset; multicell upset probability; silent data corruption; soft error rate estimation; test-chip measurement; Arrays; Estimation; Filling; Layout; Mathematical model; Random access memory; Solids; MBU; MCU; SBU; SEU; multi-bit upset; multi-cell upset; neutron; single event upset;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Reliability Physics Symposium (IRPS), 2015 IEEE International
Conference_Location :
Monterey, CA
Type :
conf
DOI :
10.1109/IRPS.2015.7112831
Filename :
7112831
Link To Document :
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