Title :
Comprehensive understanding of hot carrier degradation in multiple-fin SOI FinFETs
Author :
Hai Jiang ; Longxiang Yin ; Yun Li ; Nuo Xu ; Kai Zhao ; Yandong He ; Gang Du ; Xiaoyan Liu ; Xing Zhang
Author_Institution :
Inst. of Microelectron., Peking Univ., Beijing, China
Abstract :
In this work, we comprehensively explore hot carrier degradation (HCD) in multiple-fin SOI FinFETs with both short channel length and long channel length, and demonstrate that the degradation mechanism in short channel device is different from that of long channel device. The hot carrier degradation in short channel length device under long stress time is dominated by oxide charge. Meanwhile, the hot carrier degradation is aggravated by self-heating effect (SHE).
Keywords :
MOSFET; hot carriers; silicon-on-insulator; HCD; SHE; degradation mechanism; hot carrier degradation; long-channel length device; multiple-fin SOI FinFET; oxide charge; self-heating effect; short-channel length device; stress time; Degradation; FinFETs; Hot carriers; Logic gates; Reliability; Silicon-on-insulator; Stress; Silicon-on-Insulator; hot carrier; interface charge; multi-gate FET; oxide charge; reliability;
Conference_Titel :
Reliability Physics Symposium (IRPS), 2015 IEEE International
Conference_Location :
Monterey, CA
DOI :
10.1109/IRPS.2015.7112837
