DocumentCode
71039
Title
All-Semiconductor Photonic Crystal Surface-Emitting Lasers Based on Epitaxial Regrowth
Author
Taylor, R.J.E. ; Williams, D.M. ; Childs, D.T.D. ; Stevens, B.J. ; Shepherd, L.R. ; Khamas, S. ; Groom, K.M. ; Hogg, R.A. ; Ikeda, N. ; Sugimoto, Yoshiki
Author_Institution
Dept. of Electron. & Electr. Eng., Univ. of Sheffield, Sheffield, UK
Volume
19
Issue
4
fYear
2013
fDate
July-Aug. 2013
Firstpage
4900407
Lastpage
4900407
Abstract
The realization of all-semiconductor epitaxially regrown photonic crystal (PC) surface-emitting lasers is reported. PC coupling strengths, band structure, optimization of epitaxial regrowth, and operating characteristics are discussed. Room temperature operation allows agreement between theoretical and experimental band structure to be confirmed.
Keywords
epitaxial growth; optical couplers; optimisation; photonic crystals; semiconductor lasers; PC coupling strengths; all-semiconductor epitaxial lasers; all-semiconductor photonic crystal lasers; band structure; epitaxial regrowth; optimization; regrown photonic crystal lasers; surface-emitting lasers; Couplings; Dielectrics; Epitaxial growth; Gallium arsenide; Lasers; Photonic crystals; Shape; Nanophotonics; photonic crystals; semiconductor growth; semiconductor lasers;
fLanguage
English
Journal_Title
Selected Topics in Quantum Electronics, IEEE Journal of
Publisher
ieee
ISSN
1077-260X
Type
jour
DOI
10.1109/JSTQE.2013.2249293
Filename
6471177
Link To Document