Integral impact of BTI and voltage temperature variation on SRAM sense amplifier

With the continuous downscaling of CMOS technologies, ICs become more vulnerable to transistor aging mainly due to Bias Temperature Instability (BTI). A lot of work is published on the impact of BTI in SRAMs; however most of the work focused mainly on the memory cell array. An SRAM consists also of peripheral circuitries such as address decoders, sense amplifiers, etc. This paper characterizes the combined impact of BTI and voltage temperature fluctuations on the memory sense amplifier for different technology nodes (45nm up to 16nm). The evaluation metric, the sensing delay (SD), is analyzed for various workloads. In contrast to earlier work, this paper thoroughly quantifies the increased impact of BTI in such sense amplifiers for all the relevant technology scaling parameters. The results show that the BTI impact for nominal voltage and temperature is 6.7% for 45nm and 12.0% for 16nm when applying the worst case workload, while this is 1.8% for 45nm technology and 3.6% higher for 16nm when applying the best case workload. In addition, the results show that the increase in power supply significantly reduces the BTI degradation; e.g., the degradation at -10%V_dd is 9.0%, while this does not exceed 5.3% at +10%V_dd at room temperature. Moreover, the results that the increase in temperature can double the degradation; for instance, the degradation at room temperature and nominal V_dd is 6.7% while this goes up to 18.5% at 398K.