DocumentCode :
710999
Title :
Prospect of embedded non-volatile memory in the smart society
Author :
Yamauchi, Tadaaki
Author_Institution :
Renesas Electron. Corp., Tokyo, Japan
fYear :
2015
fDate :
27-29 April 2015
Firstpage :
1
Lastpage :
2
Abstract :
Embedded Flash (eFlash) is widely accepted by various applications because of reducing overall costs of system development, production and inventory. Continuous evolution of eFlash such as the split-gate charge-trapping memory has satisfied the most stringent quality requirement for automotive applications. Smart society for offering a better quality of life would diversify NV memory until the establishment of emerging memories. Add-on type eFlash with a few additional masks would replace the stand-alone data flash for adaptive tuning and security over the network. Towards the possible convergence of NV-memory in smart society, emerging memories such as ReRAM and STT-MRAM are progressing. Excellent features of smaller rewrite energy with the extending rewrite cycles could contribute to the outstanding energy saving such as normally-off systems.
Keywords :
embedded systems; flash memories; NV memory; ReRAM; STT-MRAM; adaptive tuning; add-on type eFlash; automotive applications; embedded flash; embedded nonvolatile memory; energy saving; network security; normally-off systems; rewrite cycles; smart society; split-gate charge-trapping memory; stand-alone data flash; Automotive engineering; Consumer electronics; Memory management; Nonvolatile memory; Reliability; Safety; Security;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
VLSI Technology, Systems and Application (VLSI-TSA), 2015 International Symposium on
Conference_Location :
Hsinchu
Type :
conf
DOI :
10.1109/VLSI-TSA.2015.7117541
Filename :
7117541
Link To Document :
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