High-performance fully transparent Ti-Zn-O thin film transistors

Author

Nannan Zhao ; Dedong Han ; Zhuofa Chen ; Jing Wu ; Yingying Cong ; Junchen Dong ; Feilong Zhao ; Shengdong Zhang ; Xing Zhang ; Yi Wang

Author_Institution

Shenzhen Grad. Sch., Peking Univ., Shenzhen, China

fYear

2015

fDate

27-29 April 2015

Firstpage

1

Lastpage

2

Abstract

Since the report [1] in 2004 on transparent and flexible thin film transistors (TFTs) using amorphous In-Ga-Zn-O (IGZO), an increasing number of companies [2] have taken part into developing this type of TFTs and have demonstrated various flat panel displays (FPDs), including e-papers, organic light-emitting diodes (OLEDs) and liquid crystal displays (LCDs). Undeniably, IGZO TFTs exhibit excellent performances in various aspects, such as high mobility, comparably good stability and mature fabrication process [3-4]. However, In element is a toxicant element, which is harmful to human body. What´s worse, the storage of both In and Ga element is very limited, leading to their high price. This is very detrimental to industrial production. So we need to develop some new materials.

Keywords

II-VI semiconductors; flat panel displays; gallium; indium; thin film transistors; titanium compounds; wide band gap semiconductors; zinc compounds; FPD; In-Ga-Zn-O; LCD; OLED; TFT; TiZnO; e-papers; fabrication process; flat panel displays; high mobility aspects; high-performance fully transparent-flexible thin film transistors; human body; industrial production; liquid crystal displays; organic light-emitting diodes; stability; toxicant element; Atmosphere; Films; Fluid flow; Logic gates; Performance evaluation; Thin film transistors; Zinc oxide;

fLanguage

English

Publisher

ieee

Conference_Titel

VLSI Technology, Systems and Application (VLSI-TSA), 2015 International Symposium on

Conference_Location

Hsinchu

Type

conf

DOI

10.1109/VLSI-TSA.2015.7117554

Filename

7117554