High-performance fully transparent Ti-Zn-O thin film transistors

Since the report [1] in 2004 on transparent and flexible thin film transistors (TFTs) using amorphous In-Ga-Zn-O (IGZO), an increasing number of companies [2] have taken part into developing this type of TFTs and have demonstrated various flat panel displays (FPDs), including e-papers, organic light-emitting diodes (OLEDs) and liquid crystal displays (LCDs). Undeniably, IGZO TFTs exhibit excellent performances in various aspects, such as high mobility, comparably good stability and mature fabrication process [3-4]. However, In element is a toxicant element, which is harmful to human body. What´s worse, the storage of both In and Ga element is very limited, leading to their high price. This is very detrimental to industrial production. So we need to develop some new materials.