Relaxed Ge0.97Sn0.03 P-channel tunneling FETs with high drive current fabricated on Si and further improvement enabled by uniaxial tensile strain

Author

Mingshan Liu ; Genquan Han ; Yan Liu ; Chunfu Zhang ; Jincheng Zhang ; Xiaohua Ma ; Buwen Cheng ; Yue Hao

Author_Institution

Key Lab. of Optoelectron. Technol. & Syst. of the Educ. Minist. of China, Chongqing Univ., Chongqing, China

fYear

2015

fDate

27-29 April 2015

Firstpage

1

Lastpage

2

Abstract

We fabricated relaxed Ge_0.97Sn_0.03 pTFETs on Si(001). The devices show much higher I_ON than SiGe, Ge, and compressively strained GeSn planer pTFETs in literatures. For the first time, I_ON enhancement in GeSn pTFET utilizing uniaxial strain is reported. By applying 0.14% uniaxial tensile strain along channel direction, Ge_0.97Sn_0.03 [110] pTFETs achieve ~ 10% I_ON improvement, over relaxed devices at |V_GS - V_TH| = |V_DS| = 1.0 V. Calculation demonstrates that the reduction of direct E_G by tensile strain results in an enhanced G_BTBT in GeSn, leading to improvement of I_ON in uniaxially tensile strained pTFET.

Keywords

Ge-Si alloys; elemental semiconductors; field effect transistors; germanium compounds; semiconductor device manufacture; tunnel transistors; Ge_0.97Sn_0.03; I_ON enhancement; P-channel tunneling FET; SiGe; band-to-band tunneling; enhanced GBTBT; high drive current; uniaxial tensile strain; Logic gates; Silicon; Silicon germanium; Temperature; Tensile strain; Tin; Tunneling;

fLanguage

English

Publisher

ieee

Conference_Titel

VLSI Technology, Systems and Application (VLSI-TSA), 2015 International Symposium on

Conference_Location

Hsinchu

Type

conf

DOI

10.1109/VLSI-TSA.2015.7117562

Filename

7117562