Title :
Relaxed Ge0.97Sn0.03 P-channel tunneling FETs with high drive current fabricated on Si and further improvement enabled by uniaxial tensile strain
Author :
Mingshan Liu ; Genquan Han ; Yan Liu ; Chunfu Zhang ; Jincheng Zhang ; Xiaohua Ma ; Buwen Cheng ; Yue Hao
Author_Institution :
Key Lab. of Optoelectron. Technol. & Syst. of the Educ. Minist. of China, Chongqing Univ., Chongqing, China
Abstract :
We fabricated relaxed Ge0.97Sn0.03 pTFETs on Si(001). The devices show much higher ION than SiGe, Ge, and compressively strained GeSn planer pTFETs in literatures. For the first time, ION enhancement in GeSn pTFET utilizing uniaxial strain is reported. By applying 0.14% uniaxial tensile strain along channel direction, Ge0.97Sn0.03 [110] pTFETs achieve ~ 10% ION improvement, over relaxed devices at |VGS - VTH| = |VDS| = 1.0 V. Calculation demonstrates that the reduction of direct EG by tensile strain results in an enhanced GBTBT in GeSn, leading to improvement of ION in uniaxially tensile strained pTFET.
Keywords :
Ge-Si alloys; elemental semiconductors; field effect transistors; germanium compounds; semiconductor device manufacture; tunnel transistors; Ge0.97Sn0.03; ION enhancement; P-channel tunneling FET; SiGe; band-to-band tunneling; enhanced GBTBT; high drive current; uniaxial tensile strain; Logic gates; Silicon; Silicon germanium; Temperature; Tensile strain; Tin; Tunneling;
Conference_Titel :
VLSI Technology, Systems and Application (VLSI-TSA), 2015 International Symposium on
Conference_Location :
Hsinchu
DOI :
10.1109/VLSI-TSA.2015.7117562
