Title :
Germanium-Tin P-channel tunneling field-effect transistors: Impacts of biaxial tensile strain and surface orientation
Author :
Hongjuan Wang ; Genquan Han ; Yan Liu ; Mingshan Liu ; Chunfu Zhang ; Jincheng Zhang ; Xiaohua Ma ; Yue Hao
Author_Institution :
Key Lab. of Optoelectron. Technol. & Syst. of the Educ. Minist. of China, Chongqing Univ., Chongqing, China
Abstract :
This work investigates the impacts of biaxial tensile strain and surface orientation on performance of GeSn pTFET. Multi-bands k·p method is used to calculate the band structure of biaxially tensile strained GeSn on various orientations. The electrical characteristics of tensile strained GeSn line- and point-pTFETs are computed implementing the dynamic nonlocal BTBT algorithm. Our simulation demonstrates that 1) tensile strained GeSn pTFETs achieve significantly improved |ION| over relaxed devices; 2) With the same tensile strain, GeSn pTFETs on (011) and (111) orientations demonstrate higher |ION| compared to (001)-oriented device.
Keywords :
field effect transistors; germanium; tin; tunnel transistors; GeSn; P-channel tunneling field effect transistors; band structure; biaxial tensile strain; dynamic nonlocal BTBT algorithm; electrical characteristics; multiband k-p method; over relaxed device improvement; point-pTFET; surface orientation; Effective mass; Heuristic algorithms; Logic gates; Tensile strain; Tin; Tunneling;
Conference_Titel :
VLSI Technology, Systems and Application (VLSI-TSA), 2015 International Symposium on
Conference_Location :
Hsinchu
DOI :
10.1109/VLSI-TSA.2015.7117563
