Germanium-Tin P-channel tunneling field-effect transistors: Impacts of biaxial tensile strain and surface orientation

Author

Hongjuan Wang ; Genquan Han ; Yan Liu ; Mingshan Liu ; Chunfu Zhang ; Jincheng Zhang ; Xiaohua Ma ; Yue Hao

Author_Institution

Key Lab. of Optoelectron. Technol. & Syst. of the Educ. Minist. of China, Chongqing Univ., Chongqing, China

fYear

2015

fDate

27-29 April 2015

Firstpage

1

Lastpage

2

Abstract

This work investigates the impacts of biaxial tensile strain and surface orientation on performance of GeSn pTFET. Multi-bands k·p method is used to calculate the band structure of biaxially tensile strained GeSn on various orientations. The electrical characteristics of tensile strained GeSn line- and point-pTFETs are computed implementing the dynamic nonlocal BTBT algorithm. Our simulation demonstrates that 1) tensile strained GeSn pTFETs achieve significantly improved |I_ON| over relaxed devices; 2) With the same tensile strain, GeSn pTFETs on (011) and (111) orientations demonstrate higher |I_ON| compared to (001)-oriented device.

Keywords

field effect transistors; germanium; tin; tunnel transistors; GeSn; P-channel tunneling field effect transistors; band structure; biaxial tensile strain; dynamic nonlocal BTBT algorithm; electrical characteristics; multiband k-p method; over relaxed device improvement; point-pTFET; surface orientation; Effective mass; Heuristic algorithms; Logic gates; Tensile strain; Tin; Tunneling;

fLanguage

English

Publisher

ieee

Conference_Titel

VLSI Technology, Systems and Application (VLSI-TSA), 2015 International Symposium on

Conference_Location

Hsinchu

Type

conf

DOI

10.1109/VLSI-TSA.2015.7117563

Filename

7117563