DocumentCode :
711016
Title :
A complementary magnetic field sensor using magnetic tunnel junction
Author :
Ding-Yeong Wang ; Keng-Ming Kuo ; Cheng-Wei Chien ; Shan-Yi Yang ; Sheng-Huang Huang ; Jia-Hong Shyu ; Kuei-Hung Shen ; Tzu-Kun Ku ; Ming-Jinn Tsai
Author_Institution :
Ind. Technol. Res. Inst., Hsinchu, Taiwan
fYear :
2015
fDate :
27-29 April 2015
Firstpage :
1
Lastpage :
2
Abstract :
A complementary planar magnetic field sensor for the compass application was designed and successfully fabricated. Additionally, an MTJ with well-crystalline MgO film was also fabricated on an inclined surface as the Z-axis sensor. The weak temperature dependence was found in the planar magnetic sensor and a good consistency was found between the package level and the wafer level measurements. The operation point drift at the temperature of 185 oC is about 0.2%. Besides, the geomagnetic field was measured by the planar magnetic sensor and its sine wave-like response demonstrated the capability of the planar sensor. The sensitivities of the magnetic sensor are 10.58 mV/Oe (X-sensor) and 11.1 mV/Oe (Y-sensor).
Keywords :
geomagnetism; magnesium compounds; magnetic field measurement; magnetic sensors; magnetic thin films; magnetic tunnelling; MTJ; MgO; Z-axis sensor; compass application; complementary planar magnetic field sensor; geomagnetic field; inclined surface; magnetic tunnel junction; operation point drift; package level measurement; sine wave-like response; temperature 185 degC; wafer level measurements; weak temperature dependence; Magnetic sensors; Magnetic tunneling; Noise; Sensitivity; Temperature dependence; Temperature measurement;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
VLSI Technology, Systems and Application (VLSI-TSA), 2015 International Symposium on
Conference_Location :
Hsinchu
Type :
conf
DOI :
10.1109/VLSI-TSA.2015.7117564
Filename :
7117564
Link To Document :
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