Title :
Back-hopping phenomenon in perpendicular mangetic tunnel junctions
Author :
Sheng-Huang Huang ; Kuei-Hung Shen ; Cheng-Wei Chien ; Shan-Yi Yang ; Jia-Hong Shyu ; Ding-Yeong Wang ; Keng-Ming Kuo ; Tzu-Kun Ku ; Deng, D.
Author_Institution :
Ind. Technol. Res. Inst., Hsinchu, Taiwan
Abstract :
This study shows a clear correlation between back hopping, write error rate, bias-dependent coercivity (Hc) and the switching phase diagram (SPD) of p-MTJs. Data support that the bias-induced fieldlike torque, in addition to the Slonczewski anti-damping torque, at higher bias voltages in dual-MgO p-MTJ, and a thinner MgO capping layer may suppress the occurrence of back hopping.
Keywords :
coercive force; error statistics; magnesium compounds; magnetic tunnelling; phase diagrams; MgO; MgO capping layer; SPD; Slonczewski anti-damping torque; back hopping; bias-dependent coercivity; bias-induced fieldlike torque; dual-MgO p-MTJ; perpendicular magnetic tunnel junctions; switching phase diagram; write error rate; Magnetic field measurement; Magnetic tunneling; Switches; Thermal stability; Torque; Voltage measurement; Writing;
Conference_Titel :
VLSI Technology, Systems and Application (VLSI-TSA), 2015 International Symposium on
Conference_Location :
Hsinchu
DOI :
10.1109/VLSI-TSA.2015.7117565
