Title :
Experimental study of variability in polycrystalline and crystalline silicon channel FinFET CMOS inverters
Author :
Liu, Y.X. ; Hori, Y. ; Ohno, M. ; Matsukawa, T. ; Endo, K. ; O´uchi, S. ; Tsukada, J. ; Yamauchi, H. ; Ishikawa, Y. ; Mizubayashi, W. ; Morita, Y. ; Migita, S. ; Ota, H. ; Masahara, M.
Author_Institution :
Nat. Inst. of Adv. Ind. Sci. & Technol. (AIST), Tsukuba, Japan
Abstract :
Polycrystalline-silicon (poly-Si) and crystalline-silicon (crystal-Si) channel FinFET CMOS inverters were successfully fabricated and the variations of threshold voltage (Vt) for their individual n- and p-channel transistors and the logic gate Vt (VThc) for the inverters were systematically investigated. It was found that poly-Si n- and p-channel devices show about 3 and 5 times larger σVt values, respectively and about 2 times larger σVThc as compared to those in crystal-Si channel ones. The calculated σVTHC values by using the error propagation low are good agreement with experimental results.
Keywords :
CMOS logic circuits; MOSFET; elemental semiconductors; logic gates; silicon; Si; crystal-Si channel FinFET CMOS inverters; error propagation; logic gate; n-channel transistors; p-channel transistors; poly-Si n-channel devices; poly-Si p-channel devices; polycrystalline-silicon channel FinFET CMOS inverters; threshold voltage; CMOS integrated circuits; FinFETs; Inverters; Logic gates; Very large scale integration;
Conference_Titel :
VLSI Technology, Systems and Application (VLSI-TSA), 2015 International Symposium on
Conference_Location :
Hsinchu
DOI :
10.1109/VLSI-TSA.2015.7117571
