Title :
Improvement of Si doping of In0.53Ga0.47As fin by heated implant
Author :
Wood, Bingxi ; Hatem, Christopher ; Xinyu Bao ; Hongwen Zhou ; Ming Zhang ; Miao Jin ; Hao Chen ; Man-Ping Cai ; Munnangi, Samuel Swaroop ; Okazaki, Motoya ; Sanchez, Errol ; Brand, Adam
Author_Institution :
Appl. Mater., Silicon Syst. Group, Santa Clara, CA, USA
Abstract :
III-V materials are candidates for high mobility channel and low contact resistance SD at 5nm technology node and beyond [1]. Traditional Si+ ion implant of In0.53Ga0.47As at room temperature causes amorphization of fin and formation of stacking fault defects upon activation anneal. We have demonstrated heated implant can eliminate amorphization induced crystalline damages and improve fin conductance.
Keywords :
III-V semiconductors; amorphisation; elemental semiconductors; indium compounds; ion implantation; semiconductor doping; silicon; In0.53Ga0.47As; Si; amorphization; crystalline damages; doping; fin conductance; heated implant; high mobility channel; low contact resistance; Annealing; Gallium arsenide; Heating; Implants; Indium gallium arsenide; Silicon; Substrates;
Conference_Titel :
VLSI Technology, Systems and Application (VLSI-TSA), 2015 International Symposium on
Conference_Location :
Hsinchu
DOI :
10.1109/VLSI-TSA.2015.7117572
