• DocumentCode
    711022
  • Title

    Improvement of Si doping of In0.53Ga0.47As fin by heated implant

  • Author

    Wood, Bingxi ; Hatem, Christopher ; Xinyu Bao ; Hongwen Zhou ; Ming Zhang ; Miao Jin ; Hao Chen ; Man-Ping Cai ; Munnangi, Samuel Swaroop ; Okazaki, Motoya ; Sanchez, Errol ; Brand, Adam

  • Author_Institution
    Appl. Mater., Silicon Syst. Group, Santa Clara, CA, USA
  • fYear
    2015
  • fDate
    27-29 April 2015
  • Firstpage
    1
  • Lastpage
    2
  • Abstract
    III-V materials are candidates for high mobility channel and low contact resistance SD at 5nm technology node and beyond [1]. Traditional Si+ ion implant of In0.53Ga0.47As at room temperature causes amorphization of fin and formation of stacking fault defects upon activation anneal. We have demonstrated heated implant can eliminate amorphization induced crystalline damages and improve fin conductance.
  • Keywords
    III-V semiconductors; amorphisation; elemental semiconductors; indium compounds; ion implantation; semiconductor doping; silicon; In0.53Ga0.47As; Si; amorphization; crystalline damages; doping; fin conductance; heated implant; high mobility channel; low contact resistance; Annealing; Gallium arsenide; Heating; Implants; Indium gallium arsenide; Silicon; Substrates;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    VLSI Technology, Systems and Application (VLSI-TSA), 2015 International Symposium on
  • Conference_Location
    Hsinchu
  • Type

    conf

  • DOI
    10.1109/VLSI-TSA.2015.7117572
  • Filename
    7117572
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=711022