Title :
Inserted-oxide FinFET (iFinFET) design to extend CMOS scaling
Author :
Peng Zheng ; Connelly, Daniel ; Fei Ding ; Tsu-Jae King Liu
Author_Institution :
Dept. of Electr. Eng. & Comput. Sci., Univ. of California, Berkeley, Berkeley, CA, USA
Abstract :
A novel stacked MOSFET structure (iFinFET) is proposed to facilitate gate-length scaling to below 10 nm while mitigating the need to form very-high-aspect-ratio (>10:1 height:width) fin structures as for a stacked nanowire gate-all-around (GAA) MOSFET structure. Due to its superior electrostatic integrity, the iFinFET provides for higher performance and is more scalable than a conventional bulk FinFET.
Keywords :
CMOS integrated circuits; MOSFET; integrated circuit design; nanowires; CMOS scaling; GAA MOSFET structure; electrostatic integrity; gate-length scaling; iFinFET design; inserted-oxide FinFET; nanowire gate-all-around MOSFET structure; size 10 nm; stacked MOSFET structure; CMOS integrated circuits; FinFETs; Layout; Logic gates; Performance evaluation; Semiconductor process modeling;
Conference_Titel :
VLSI Technology, Systems and Application (VLSI-TSA), 2015 International Symposium on
Conference_Location :
Hsinchu
DOI :
10.1109/VLSI-TSA.2015.7117573
