Title :
Process optimization to reduce NiSi pipes and NiSi agglomeration on 28nm Nickel silicide LSA ms anneal process
Author :
Vijayaragavan, Varadharajan ; Fitz, Clemens ; Lepper, Marco ; Reisdorf, Ralf ; Jan, Holub ; Van Le ; Willis, Jim ; Yun Wang ; Awdshiew, Michael
Author_Institution :
GlobalFoundries Inc., Dresden, Germany
Abstract :
NiSi pipes are formed on SiGe during conventional (He based) RTA anneal processes in NiSi module due to Ni diffusion. NiSi pipes increase leakage and reduce device Vt´s. The control of Nickel diffusion is essential for device control. In this paper we use a laser anneal tool at NiSi RTA2 to control Ni diffusion. The formation of NiSi-pipes is studied as a response of process factors, such as laser and chuck temperature, wafer rotation, and dwell time. The high process temperature in the range of 700-950°C can melt NiSi. The onset of NiSi melting as a function of process parameters and layout locations are studied.
Keywords :
Ge-Si alloys; laser beam annealing; nickel compounds; optimisation; NiSi; SiGe; anneal process; chuck temperature; dwell time; laser anneal tool; laser temperature; process optimization; temperature 700 degC to 950 degC; wafer rotation; Annealing; Heating; Lasers; Nickel alloys; Semiconductor device modeling; Silicides;
Conference_Titel :
VLSI Technology, Systems and Application (VLSI-TSA), 2015 International Symposium on
Conference_Location :
Hsinchu
DOI :
10.1109/VLSI-TSA.2015.7117575
