Process optimization to reduce NiSi pipes and NiSi agglomeration on 28nm Nickel silicide LSA ms anneal process

Author

Vijayaragavan, Varadharajan ; Fitz, Clemens ; Lepper, Marco ; Reisdorf, Ralf ; Jan, Holub ; Van Le ; Willis, Jim ; Yun Wang ; Awdshiew, Michael

Author_Institution

GlobalFoundries Inc., Dresden, Germany

fYear

2015

fDate

27-29 April 2015

Firstpage

1

Lastpage

2

Abstract

NiSi pipes are formed on SiGe during conventional (He based) RTA anneal processes in NiSi module due to Ni diffusion. NiSi pipes increase leakage and reduce device Vt´s. The control of Nickel diffusion is essential for device control. In this paper we use a laser anneal tool at NiSi RTA2 to control Ni diffusion. The formation of NiSi-pipes is studied as a response of process factors, such as laser and chuck temperature, wafer rotation, and dwell time. The high process temperature in the range of 700-950°C can melt NiSi. The onset of NiSi melting as a function of process parameters and layout locations are studied.

Keywords

Ge-Si alloys; laser beam annealing; nickel compounds; optimisation; NiSi; SiGe; anneal process; chuck temperature; dwell time; laser anneal tool; laser temperature; process optimization; temperature 700 degC to 950 degC; wafer rotation; Annealing; Heating; Lasers; Nickel alloys; Semiconductor device modeling; Silicides;

fLanguage

English

Publisher

ieee

Conference_Titel

VLSI Technology, Systems and Application (VLSI-TSA), 2015 International Symposium on

Conference_Location

Hsinchu

Type

conf

DOI

10.1109/VLSI-TSA.2015.7117575

Filename

7117575