DocumentCode :
711027
Title :
Investigation of hot carrier reliability of SOI and strained SOI transistors using back bias
Author :
Besnard, G. ; Garros, X. ; Subirats, A. ; Andrieu, F. ; Federspiel, X. ; Rafik, M. ; Schwarzenbach, W. ; Reimbold, G. ; Faynot, O. ; Cristoloveanu, S. ; Mazure, C.
Author_Institution :
CEA-LETI, Grenoble, France
fYear :
2015
fDate :
27-29 April 2015
Firstpage :
1
Lastpage :
2
Abstract :
In this paper, we investigate the potential of strained Silicon-On-Insulator for the future advanced CMOS nodes. Strained FDSOI devices not only exhibit a 30% higher performance in term of ION/IOFF but also show superior HC reliability at same drive current regardless of the back bias.
Keywords :
CMOS integrated circuits; hot carriers; semiconductor device reliability; silicon-on-insulator; CMOS nodes; back bias; hot carrier reliability; silicon-on-insulator; strained SOI transistors; Degradation; Performance evaluation; Reliability; Silicon; Silicon-on-insulator; Stress; Transistors;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
VLSI Technology, Systems and Application (VLSI-TSA), 2015 International Symposium on
Conference_Location :
Hsinchu
Type :
conf
DOI :
10.1109/VLSI-TSA.2015.7117577
Filename :
7117577
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=711027
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