Title :
Analysis of monolithic 3D 6T SRAM using ultra-thin-body InGaAs/Ge MOSFETs considering interlayer coupling
Author :
Kuan-Chin Yu ; Ming-Long Fan ; Pin Su ; Ching-Te Chuang
Author_Institution :
Dept. of Electron. Eng., Nat. Chiao Tung Univ., Hsinchu, Taiwan
Abstract :
TCAD analysis results indicate that the cell robustness and performance of InGaAs-n/Ge-p 6T SRAM can be improved simultaneously with interlayer coupling through optimized monolithic 3D layout design. We suggest two layout designs for high performance and low power operation, respectively. Moreover, with optimized layout designs, InGaAs/Ge 6T SRAM exhibits larger Read access time and Time-to-Write improvement compared with Si-based counterparts.
Keywords :
III-V semiconductors; MOS memory circuits; SRAM chips; elemental semiconductors; gallium arsenide; germanium; indium compounds; silicon; Ge; InGaAs; Si; TCAD analysis; interlayer coupling; monolithic 3D 6T SRAM; monolithic 3D layout design; read access time; time-to-write improvement; ultra-thin-body MOSFET; Couplings; Indium gallium arsenide; Layout; Random access memory; Silicon; Three-dimensional displays; Wireless sensor networks;
Conference_Titel :
VLSI Technology, Systems and Application (VLSI-TSA), 2015 International Symposium on
Conference_Location :
Hsinchu
DOI :
10.1109/VLSI-TSA.2015.7117588
